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Top‐Gated Polymer Light‐Emitting Transistors Based on the Device Fabrication without Intermixing of Poly(methyl methacrylate) Gate Dielectric Formed from Fluorine‐Based Orthogonal Solvent
Author(s) -
Kajii Hirotake,
Mashimo Takayuki,
Hara Mikio,
Ohmori Yutaka,
Kondow Masahiko
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900531
Subject(s) - fabrication , materials science , dielectric , optoelectronics , methyl methacrylate , gate dielectric , fluorine , transistor , phenylene , poly(methyl methacrylate) , layer (electronics) , polymer , active layer , nanotechnology , thin film transistor , composite material , voltage , polymerization , electrical engineering , medicine , metallurgy , engineering , alternative medicine , pathology
Poly(methyl methacrylate) (PMMA) gate dielectric formed using fluorine‐based solvent, CF 3 CH 2 OCF 2 CHF 2 (AGC, AE‐3000), is useful to prevent mixing of the dielectric layer with the emissive layer for top‐gated organic light‐emitting transistor (OLET) device fabrication. The device performance of OLETs based on a poly( p ‐phenylene vinylene) derivative, Super Yellow, is improved because of the fabrication without intermixing. For an OLET with Pt‐tetraphenyltetrabenzoporphyrin [Pt(tpbp)] doped in poly(alkylfluorene), a near‐infrared emission from Pt(tpbp) and a relatively high external quantum efficiency of approximately 1% are achieved. This device fabrication method opens perspectives in the development of the damage‐free fabrication processes in printed top‐gated OLETs.