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Investigation of Ion Channeling and Scattering for Single‐Ion Implantation with High Spatial Resolution
Author(s) -
Raatz Nicole,
Scheuner Clemens,
Pezzagna Sébastien,
Meijer Jan
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900528
Subject(s) - ion , materials science , scattering , ion beam , ion implantation , kinetic energy , atomic physics , resolution (logic) , optics , surface roughness , aperture (computer memory) , surface finish , bragg peak , beam (structure) , focused ion beam , molecular physics , chemistry , physics , organic chemistry , quantum mechanics , artificial intelligence , computer science , composite material , acoustics
The production of quantum systems based on single atoms in a solid requires new techniques in ion implantation. A pierced atomic force microscope (AFM) tip is developed as a nanoaperture to implant single ions with nanometer resolution at kinetic energies below 10 keV to avoid ion straggling. This technique is already used for a large number of novel quantum devices in diamonds. However, to further improve the resolution, scattering at the aperture is identified as the main limiting factor of lateral placement accuracy and ion channeling effect as the main factor for depth resolution at low kinetic energy. The simulations of the scattering effects show that the fraction of scattered ions depends not only on the cone angle and shape of the hole, but also on the beam divergence and the gap between AFM tip and sample. The decrease in axial precision due to ion channeling depends mainly on the surface roughness and the incident angle of the ion beam. For a smooth (100) surface, a 12°‐inclined beam that provides the best conditions for highest resolution is found.