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Buried‐Tunnel Junction Current Injection for InP‐Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon
Author(s) -
Reuterskiöld Hedlund Carl,
Liu Shih-Chia,
Zhao Deyin,
Zhou Weidong,
Hammar Mattias
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900527
Subject(s) - materials science , optoelectronics , diode , silicon , epitaxy , laser , substrate (aquarium) , current density , fabrication , photonic crystal , light emitting diode , tunnel junction , optics , nanotechnology , physics , quantum tunnelling , medicine , oceanography , alternative medicine , layer (electronics) , quantum mechanics , pathology , geology
Herein, the design, metal‐organic vapor‐phase epitaxial growth, fabrication, and characterization of buried‐tunnel junction (BTJ) current injection structures for InP/Si hybrid nanomembrane photonic crystal surface emitting lasers (PCSELs) are reported. Corresponding BTJ‐light‐emitting diodes on InP substrate show low series resistance and uniform carrier injection over square‐shaped device areas with side length ranging from 15 up to 250 μm, whereas BTJ‐PCSEL structures with similar current injection configuration fabricated on photonic‐crystal silicon‐on‐insulator substrate using transfer print technology show significant linewidth narrowing at low current density.