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Regional Bandgap Tailoring of 1550 nm‐Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth
Author(s) -
Isawa Shohei,
Akashi Yota,
Morita Ryosuke,
Kaneko Runa,
Okada Hirokazu,
Matsumoto Atsushi,
Akahane Koichi,
Matsushima Yuichi,
Ishikawa Hiroshi,
Utaka Katsuyuki
Publication year - 2020
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900521
Subject(s) - ion implantation , materials science , optoelectronics , quantum dot , photoluminescence , band gap , ion , annealing (glass) , semiconductor , wavelength , photonics , nanotechnology , chemistry , organic chemistry , composite material
The regional control of the bandgap energies using the highly stacked quantum dot (QD) on InP(311)B substrate changing ion implantation depths in the process of the quantum dot intermixing (QDI) technique is investigated. The QDI process involves B + implantation and rapid thermal annealing (RTA) around 600 °C, in which the ion implantation depths are controlled regionally with a combination of SiO 2 and polymer (AZ) films. Controlled blue shifts of the photoluminescence (PL) spectra verify the effectiveness of the regionally controlled QDI process for application to semiconductor photonic integrated circuits using 1550 nm‐band QD such as integrated wavelength division multiplexing (WDM) light sources.