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Tuning the Electrical Properties of Titanium Oxide Bilayers Prepared by Atomic Layer Deposition at Different Temperatures
Author(s) -
Gotoh Kazuhiro,
Mochizuki Takeya,
Kurokawa Yasuyoshi,
Usami Noritaka
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900495
Subject(s) - atomic layer deposition , materials science , passivation , deposition (geology) , titanium , stacking , layer (electronics) , electrical resistivity and conductivity , oxide , chemical engineering , titanium oxide , nanotechnology , chemistry , metallurgy , paleontology , organic chemistry , engineering , sediment , electrical engineering , biology
Carrier‐selective contacts prepared by atomic layer deposition (ALD) have received significant attention for developing high‐efficiency solar cells. Herein, the electrical properties of titanium oxide (TiO x ) prepared by ALD are manipulated by modulating the deposition temperature during ALD. Tunable electrical properties are possible due to the existence of oxygen vacancies in TiO x prepared at low deposition temperatures. TiO x layers prepared at 100 and 150 °C provide a low contact resistivity and high passivation performance, respectively. A high carrier selectivity of 13.5 is achieved by stacking the TiO x layers prepared at 100 and 150 °C, compared with a single TiO x layer. Modulating the deposition temperature can, therefore, improve the electrical properties of ALD‐TiO x . This approach can be used to optimize the functionality of ALD‐based materials.