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Theoretical Modeling of Triple‐Barrier Resonant‐Tunneling Diodes Based on AlGaN/GaN Heterostructures
Author(s) -
Rong Taotao,
Yang Lin-An,
Zhao Ziyue,
Zhang Kai,
Hao Yue
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900471
Subject(s) - quantum tunnelling , heterojunction , diode , materials science , optoelectronics , current density , quantum well , current (fluid) , condensed matter physics , physics , quantum mechanics , laser , thermodynamics
Herein, the performance of asymmetric triple‐barrier resonant‐tunneling diodes (TBRTDs) based on AlGaN/GaN heterostructures is investigated using numerical simulation. TBRTD can yield the current–voltage characteristics exhibiting two negative differential resistance (NDR) regions. Investigations show that the peak‐to‐valley current ratio (PVCR) can approach the value as high as 12.3 and the peak current density remains at a high value of 2 × 10 5 A cm −2 for the first NDR region, whereas the PVCR has a value of 2 and the peak current density can reach as high as the value of 9 × 10 5 A cm −2 for the second NDR region. Analysis shows that the introduction of the second quantum well (QW2) beside the main quantum well (QW1) can suppress the leakage current and alters the electron tunneling, which significantly improve PVCR and the reproducibility of NDR characteristic. An appropriate adjustment of QW2 and the Al component in the barrier can effectively modulate the number of NDR regions and their performances, which gives us great flexibility in device design.