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A Survey of Transparent Conducting Films and Optoelectrical Materials for High Optical Power Applications
Author(s) -
Yoo Jae-Hyuck,
Lange Andrew,
Chesser John,
Falabella Steve,
Elhadj Selim
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900459
Subject(s) - materials science , laser , optoelectronics , doping , free carrier absorption , absorption (acoustics) , semiconductor , nanosecond , carrier lifetime , optics , composite material , physics , silicon
The lifetime laser damage performance of a wide range of transparent conductive materials is assessed, including ultrathin metal films, doped metal oxides, doped compound semiconductors, and graphene whose carrier densities span five orders of magnitude from 10 18 to 10 23 cm −3 . Lifetime laser damage thresholds are determined by exposing material surfaces to repeated nanosecond laser pulses at near IR wavelengths (1064 nm). Near threshold fluences, two distinct damage modes, i.e., bulk and discrete, emerge depending on carrier density. These bulk and discrete damage modes are attributed to free carrier‐induced bulk and localized, defect‐driven absorption processes, respectively. For polycrystalline films with free carrier densities greater than ≈10 20 cm −3 , laser damage thresholds are less than 5 J cm −2 . In contrast, bulk absorption is not apparent at thresholds substantially higher than ≈10 J cm −2 in single‐crystal films with free carrier concentrations lower than ≈10 19 cm −3 . By increasing thickness, films with lower carrier densities can deliver relevant levels of sheet conductance (<200 Ω sq −1 ) while remaining transparent. These lifetime laser damage threshold measurements offer systematic criteria to select materials aimed at handling high optical powers in optoelectronics devices and emerging plasmonic and metamaterials for lasers.