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The Effect of Annealing Pressure on Perovskite Films and Its Thin‐Film Field‐Effect Transistors' Performance
Author(s) -
Zhou Zhou,
Guo Ning,
Peng Yuze,
Tang Linlin,
Zhang Jianjun,
Cai Hongkun,
Ni Jian,
Sun Yanyan,
Li Juan
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900434
Subject(s) - materials science , annealing (glass) , grain size , thin film , nucleation , thin film transistor , surface roughness , field effect transistor , composite material , optoelectronics , nanotechnology , transistor , layer (electronics) , electrical engineering , chemistry , organic chemistry , engineering , voltage
The effect of annealing pressure on the properties of organic–inorganic hybrid perovskite is investigated. A novel and facile low‐pressure annealing strategy is proposed to obtain high‐quality perovskite films with full coverage, micrometer‐sized grains, and small roughness. Herein, it is found that a low‐pressure annealing environment is favorable for the volatilization of the residual solvent in the initial film to further improve the nucleation rate of the perovskite. The grain size has a great correlation with the annealing pressure and time. As a result, the thin‐film field‐effect transistors fabricated by this optimized film exhibit a relatively high field‐effect mobility of 1.8 × 10 −2 cm 2 Vs −1 . Herein, it is significant that fabricating high‐quality perovskite films by the solution process in air is made possible.