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A 800 V β‐Ga 2 O 3 Metal–Oxide–Semiconductor Field‐Effect Transistor with High‐Power Figure of Merit of Over 86.3 MW cm −2
Author(s) -
Feng Zhaoqing,
Cai Yuncong,
Yan Guangshuo,
Hu Zhuangzhuang,
Dang Kui,
Zhang Yanni,
Lu Zhijun,
Cheng Hongjuan,
Lian Xiaozheng,
Xu Yongkuan,
Zhang Chunfu,
Feng Qian,
Zhou Hong,
Zhang Jincheng,
Hao Yue
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900421
Subject(s) - figure of merit , materials science , optoelectronics , field effect transistor , doping , breakdown voltage , transistor , mosfet , analytical chemistry (journal) , electrical engineering , voltage , chemistry , chromatography , engineering
Herein, a high‐performance β‐gallium oxide (β‐Ga 2 O 3 ) metal–oxide–semiconductor field‐effect transistor (MOSFET) on sapphire substrate with a high breakdown voltage of more than 800 V and a high‐power figure of merit of more than 86.3 MV cm −2 is demonstrated. The atomic force microscopy (AFM) image and Raman peaks that are first characterized to ensure a nanomembrane with high quality are used for the device fabrication. A saturation drain current of 231.8 mA mm −1 , an R ON,sp of 7.41 mΩ cm 2 , an ON/OFF ratio of 10 8 , and a subthreshold swing of 86 mV dec −1 are obtained at a channel doping concentration of 4.47 × 10 17 cm −3 and a source‐to‐drain distance of 11.4 μm. Furthermore, a high breakdown voltage over 800 V is also achieved, corresponding to a record‐high direct current (DC) power figure of merit of 86.3 MW cm −2 . Technology computer aided design (TCAD) simulation is also performed to extract the distribution of the electric field along the β‐Ga 2 O 3 channel surface.