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Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors
Author(s) -
He Yunlong,
Huang Zeyang,
Zhang Meng,
Wu Mei,
Mi Minhan,
Wang Chong,
Yang Ling,
Zhang Chunfu,
Guo Lixin,
Ma Xiaohua,
Hao Yue
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900396
Subject(s) - high electron mobility transistor , transconductance , materials science , optoelectronics , transistor , phonon scattering , nanowire , threshold voltage , scattering , electron mobility , voltage , electrical engineering , physics , optics , thermal conductivity , composite material , engineering
In this work, three AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) with different channel widths have been fabricated. The temperature dependent characteristics of NC‐HEMTs are studied and compared with conventional HEMT. The results show that the on‐state current density of NC‐HEMTs have weaker temperature dependence, and the threshold voltage variation of NC‐HEMTs is lower. In addition, the temperature characteristics of the drain‐induced barrier lowering of NC‐HEMT are first reported. Moreover, there are two main scattering mechanisms that influence the transconductance characteristics of NC‐HEMT, phonon scattering and Coulomb scattering, which correspond to different gate voltage biases.