Premium
Giant Reflection Coefficient on Sc 0.26 Al 0.74 N Polycrystalline Diamond Surface Acoustic Wave Resonators
Author(s) -
Sinusía Lozano Miguel,
Chen Zhuohui,
Williams Oliver A.,
Iriarte Gonzalo F.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900360
Subject(s) - materials science , thin film , sputtering , diamond , surface acoustic wave , substrate (aquarium) , temperature coefficient , crystallite , electromechanical coupling coefficient , optoelectronics , analytical chemistry (journal) , optics , ceramic , composite material , nanotechnology , metallurgy , chemistry , oceanography , physics , chromatography , geology
Since the commercialization of surface acoustic wave (SAW) devices, the technology is steadily increasing the device performances without compromising their power handling, size and price. Herein, one‐port SAW resonators are fabricated on scandium aluminum nitride (Sc 0.26 Al 0.74 N)/polycrystalline diamond heterostructures. SAW propagation properties are studied using three different piezoelectric thin‐film thicknesses within the heterostructure. The Rayleigh and Sezawa resonance frequencies are above 1.5 and 2.5 GHz, respectively, achieving Sezawa mode reflection coefficients below −50 dB. The polycrystalline diamond substrate is synthesized by microwave plasma chemical vapor deposition (MPCVD) on top of a 500 μm‐thick Si (001) substrate. The Sc 0.26 Al 0.74 N thin films are synthesized by reactive sputtering at nominally room temperature. The thin film's composition is analyzed by Rutherford backscattering spectrometry (RBS). The full width at half maximum (FWHM) of the X‐ray diffraction (XRD) ω scans below 3° indicates that the synthesized Sc 0.26 Al 0.74 N thin films are highly c ‐axis oriented. The electromechanical coupling coefficient, quality factor, and dielectric loss parameters are computed by curve fitting the device electrical measurements to the simulation results of a modified Butterworth Van Dyke (mBVD) model implemented in the advance design system (ADS) tool.