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Influence of MoS 2 ‐Silicon Interface States on Spectral Photoresponse Characteristics
Author(s) -
Desai Pradeep,
Ranade Ajinkya K.,
Mahyavanshi Rakesh,
Tanemura Masaki,
Kalita Golap
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900349
Subject(s) - heterojunction , optoelectronics , materials science , biasing , silicon , wafer , semiconductor , photovoltaic effect , photovoltaic system , voltage , physics , electrical engineering , quantum mechanics , engineering
Fabrication of heterojunction with transition metal dichalcogenide (TMDC) layers and convention bulk semiconductor is of great interest for optoelectronic device applications. Herein, the influence of interface in a fabricated molybdenum sulfide (MoS 2 ) and p‐type silicon (Si) heterostructure on bias‐dependent photoresponse is demonstrated. The MoS 2 layers deposited on the p‐type Si wafer show a photovoltaic action and a photoresponsivity of 139 mA W −1 at 860 nm wavelength for a bias voltage of −5 V. It is observed that the spectral photoresponse of the device enhanced considerably with an applied bias voltage than that of the photovoltaic mode due to an effective field effect across the heterojunction. The increase in photoresponsivity at a higher wavelength (>600 nm) is significant than that of lower wavelength (<500 nm) at the bias voltage. This may due to surface recombination of photocarriers for higher energy photons in the presence of interface states at the MoS 2 /Si heterojunction. The understanding of photocarriers behavior in the fabricated MoS 2 /Si heterojunction interface can be critical to develop high photoresponsive heterojunction devices.