Premium
Near‐Surface Defect Control by Vacancy Injecting/Out‐Diffusing Rapid Thermal Annealing
Author(s) -
Müller Timo,
Gehmlich Michael,
Sattler Andreas,
Kissinger Gudrun,
Kot Dawid,
Daub Erich,
Miller Alfred
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900325
Subject(s) - dissolution , annealing (glass) , vacancy defect , materials science , oxidizing agent , crystallographic defect , dissociation (chemistry) , homogeneity (statistics) , chemical physics , oxide , crystallography , chemical engineering , analytical chemistry (journal) , chemistry , metallurgy , statistics , mathematics , organic chemistry , chromatography , engineering
Rapid thermal annealing (RTA) can be applied to dissolve small defects such as voids or small‐sized oxygen precipitates and to manipulate vacancies in a specific depth from the surface. This can be achieved at elevated temperatures around 1300 °C and via NH 3 dissociation at the surface at temperatures >1150 °C. In an earlier study (Araki et al., 2013), it had been demonstrated already that even under oxidizing ambient, enhanced bulk micro defects formation around 1300–1350 °C can occur. The near‐surface region is monitored via its homogeneity of precipitation and in‐depth vacancy profiling by Pt‐diffusion. Simulations of defect dissolution during RTA processes are performed up to 1290 °C under different ambient. The size‐dependent defect dissolution behavior is predicted and verified by measurement of the gate oxide integrity.