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The Effects of Aluminum Gettering and Thermal Treatments on the Light‐Emitting Properties of Dislocation Structures in Self‐Implanted Silicon Subjected to Boron Ion Doping
Author(s) -
Tereshchenko Alexey,
Korolev Dmitry,
Khorosheva Maria,
Mikhaylov Alexey,
Belov Alexey,
Nikolskaya Alena,
Tetelbaum David
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900323
Subject(s) - luminescence , boron , getter , materials science , silicon , dislocation , photoluminescence , doping , analytical chemistry (journal) , aluminium , ion , composite material , optoelectronics , chemistry , organic chemistry , chromatography
The effect of aluminum gettering (AlG) procedures and thermal treatments on the temperature dependence of the photoluminescence of dislocation structures in silicon formed by Si + ion implantation and modified by boron ion doping with various doses is investigated. It is shown that the temperature dependence of the D1 line intensity of dislocation‐related luminescence undergoes radical changes as a result of both AlG and thermal treatments at identical regimes. After AlG, the shape of the temperature dependence of the D1 line intensity does not depend on the dose of implanted boron, and a continuous strong increase in the luminescence intensity from 6 to 90–100 K is observed, forming a maximum on the temperature dependence curve. In the case of identical heat treatments of samples (without deposition of the Al film), the correlation is found between the position of the high‐temperature luminescence maximum and the concentration of the implanted boron, namely, its shift to higher temperatures with increasing boron content. A possible mechanism of the observed anomalous behavior of luminescence is discussed.