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Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem
Author(s) -
Markevich Vladimir P.,
Vaqueiro-Contreras Michelle,
De Guzman Joyce T.,
Coutinho José,
Santos Paulo,
Crowe Iain F.,
Halsall Matthew P.,
Hawkins Ian,
Lastovskii Stanislau B.,
Murin Leonid I.,
Peaker Anthony R.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900315
Subject(s) - boron , silicon , trapping , acceptor , materials science , oxygen , electron , doping , shallow donor , charge carrier , electron acceptor , chemical physics , crystallography , chemistry , photochemistry , optoelectronics , condensed matter physics , physics , ecology , organic chemistry , quantum mechanics , biology
Results available in the literature on minority carrier trapping and light‐induced degradation (LID) effects in silicon materials containing boron and oxygen atoms are briefly reviewed. Special attention is paid to the phenomena associated with “deep” electron traps (J. A. Hornbeck and J. R. Haynes, Phys. Rev . 1955 , 97 , 311) and the recently reported results that have linked LID with the transformation of a defect consisting of a substitutional boron atom and an oxygen dimer (B s O 2 ) from a configuration with a deep donor state into a recombination active configuration associated with a shallow acceptor state (M. Vaqueiro‐Contreras et al., J. Appl. Phys . 2019 , 125 , 185704). It is shown that the B s O 2 complex is a defect with negative‐ U properties, and it is responsible for minority carrier trapping and persistent photoconductivity in nondegraded Si:B+O samples and solar cells. It is argued that the “deep” electron traps observed by Hornbeck and Haynes are the precursors of the “slow” forming shallow acceptor defects, which are responsible for the dominant LID in boron‐doped Czochralski silicon (Cz‐Si) crystals. Both the deep and shallow defects are B s O 2 complexes, transformations between charge states and atomic configurations of which account for the observed electron trapping and LID phenomena.