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Nano‐Graphite Clusters Regulation for Reliability Improvement of Amorphous Carbon‐Based Resistive Random Access Memory
Author(s) -
Tao Ye,
Zhao Peng,
Li Ye
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900278
Subject(s) - graphite , materials science , annealing (glass) , amorphous solid , raman spectroscopy , amorphous carbon , nano , nanotechnology , reliability (semiconductor) , electrical resistance and conductance , optoelectronics , composite material , chemistry , organic chemistry , quantum mechanics , optics , power (physics) , physics
Herein, the influence of nano‐graphite clusters on amorphous carbon‐based memories reliability is studied in detail. The size of nano‐graphite clusters is effectively controlled through vacuum annealing process, which is experimentally verified by Raman spectra. Taking advantage of the local electric‐field enhancement around the nano‐graphite clusters, the relative fluctuation of high‐resistance state/low‐resistance state (HRS/LRS) and SET/RESET voltage reduce from 66.5%/41.2% to 25.3%/19.7% and 43.2%/21.4% to 18.8%/15.4%, respectively. In addition, highly reliable write‐once‐read‐many (WORM) memories with excellent anti‐interference and high temperature (300 °C) retention capacity are also prepared thanks to the electrical modulating characteristic of graphite clusters to amorphous carbon (a‐C) film.