Premium
Three‐Terminal Graphene Nanoribbon Tunable Avalanche Transit Time Sources for Terahertz Power Generation
Author(s) -
Acharyya Aritra
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900277
Subject(s) - terahertz radiation , optoelectronics , graphene , planar , impatt diode , materials science , oscillation (cell signaling) , power (physics) , terminal (telecommunication) , noise (video) , modulation (music) , voltage , electrical engineering , physics , computer science , diode , acoustics , nanotechnology , telecommunications , engineering , chemistry , biochemistry , computer graphics (images) , quantum mechanics , artificial intelligence , image (mathematics)
Herein, the possibilities of tuning oscillation frequency and power in terahertz (THz) graphene nanoribbon (GNR)‐based avalanche transit time (ATT) sources by introducing a third terminal on their planar structure are discussed. In this regard, a three‐terminal planner impact ATT (IMPATT) structure based on GNR on oxide (SiO 2 ) is proposed. Inherent power combining capabilities of parallel‐connected IMPATT structures are utilized to increase the power output at THz frequencies. Static, high frequency, and noise simulations are carried out using in‐house simulation codes based on self‐consistent quantum drift–diffusion model. Results show that around 0.7–5.3% and 9.0–13.3% modulation of frequency and power output are achievable, respectively, in the GNR IMPATT oscillators operating in the frequency range of 1.0–10.0 THz, respectively, by applying a suitable amount of voltage at the third or controlling terminal; however, the enhancement of noise level at the output is observed to be insignificant as a result of using the active third‐terminal control.