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Impact of In Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors
Author(s) -
Wang Chong,
Zhao Ming,
Li Wei,
Simoen Eddy
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900248
Subject(s) - annealing (glass) , materials science , capacitor , deep level transient spectroscopy , capacitance , semiconductor , in situ , silicon , doping , optoelectronics , activation energy , analytical chemistry (journal) , electrode , voltage , metallurgy , chemistry , electrical engineering , organic chemistry , chromatography , engineering
The impact of in situ annealing on the electrical properties of AlN/(111) p‐type silicon metal–insulator–semiconductor (MIS) capacitors is studied by capacitance–voltage ( C – V ) and deep‐level transient spectroscopy (DLTS). It is demonstrated that the in‐diffusion of Al leads to an enhanced free hole concentration close to the interface, which becomes more pronounced for the in situ annealed capacitors. This excess doping in the near‐surface region yields a strong capacitance freeze‐out above 200 K. At the same time, a higher density of near mid‐gap hole traps is found in the p‐type Si substrate. The fact that the deep‐level parameters (activation energy E T and hole capture cross section σ p ) change after annealing indicates that different types of Al‐related complexes or clusters are formed before and after in situ annealing. This is supported by the different trap filling kinetics observed in both cases: while for the as‐deposited samples exponential filling is found, typical for point defects, there is a tendency for logarithmic slow filling for the deep hole traps in the annealed capacitor.