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Detection of Defects in Diamond by Etch‐Pit Formation
Author(s) -
Shimaoka Takehiro,
Ichikawa Kimiyoshi,
Koizumi Satoshi,
Watanabe Kenji,
Teraji Tokuyuki
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900247
Subject(s) - etch pit density , materials science , diamond , layer (electronics) , epitaxy , optoelectronics , mineralogy , etching (microfabrication) , crystallography , composite material , chemistry
Correlation between the reverse current density J R of diamond vertical Schottky barrier diodes (SBD) and the shape of the etch pits is investigated. Etch pits form throughout the whole epitaxial layer area with a density of 6.8 × 10 4 –3.0 × 10 5 cm −2 . Most etch pits are isolated‐type, with flat‐bottom or point‐bottom shape. A typical pit size is 3–5 μm in width and 1–3 μm in depth. Some etch pits aggregate linearly with a size of >10 μm. The SBDs show large J R when these etch pit clusters appear. The etch pit cluster density is <10 3 cm −2 .