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Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond
Author(s) -
Remes Zdenek,
Stuchlik Jiri,
Stuchlikova Ha The,
Dragounova Katerina,
Ashcheulov Petr,
Taylor Andrew,
Mortet Vincent,
Poruba Ales
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900241
Subject(s) - materials science , chemical vapor deposition , photocurrent , amorphous silicon , carbon fibers , analytical chemistry (journal) , amorphous carbon , carbon film , amorphous solid , boron , diamond , plasma enhanced chemical vapor deposition , doping , carbide , optoelectronics , silicon , thin film , nanotechnology , crystalline silicon , composite material , crystallography , chemistry , composite number , organic chemistry , chromatography
Hydrogenated amorphous substoichiometric silicon carbide (a‐Si 1− x C x :H, x < 0,1) thin films and diodes with low carbon content are prepared from a mixture of H 2 , SiH 4 , and CH 4 by plasma‐enhanced chemical vapor deposition at a relatively high temperature of 400 °C on semi‐transparent boron‐doped nanocrystalline diamond (B‐NCD) electrodes with an underlying Ti grid. Vibration spectra indicate that CH 4 prevents Si crystallization at elevated deposition temperatures and confirm an increasing carbon content up to x = 0.1 for samples grown with SiH 4 /CH 4 flows up to 1:3. Dark current–voltage characteristics of B‐NCD/a‐Si 1− x C x :H diodes show a rectifying ratio of about four orders at ±1 V. However, under white light illumination, an energy conversion efficiency of 4% is limited by a high serial resistivity of the B‐NCD electrode and S‐shaped photocurrent near the open‐circuit voltage.