Premium
Effect of Thickness of CeF 3 Layer on Electroluminescence Spectra of n‐Si/Diamond/CeF 3 /ITO Composite Films
Author(s) -
Wang Xiaoping,
Zhang Qingyuan,
Wang Lijun,
Yang Xin-Wei
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900228
Subject(s) - electroluminescence , materials science , blueshift , brightness , luminescence , blue light , spectral line , layer (electronics) , diamond , full width at half maximum , composite number , analytical chemistry (journal) , optoelectronics , optics , chemistry , photoluminescence , composite material , physics , chromatography , astronomy
A series of n‐Si/diamond/CeF 3 /ITO composite film electroluminescence (EL) devices are made, and it is found that their EL spectra and EL intensities vary with the thickness of the CeF 3 layer. For EL devices with a CeF 3 layer thickness less than 500 nm, the EL spectrum is mainly concentrated in the blue and red areas. When the thickness of CeF 3 exceeds 500 nm, the EL spectra of devices are primarily focused on the green and red areas. As the thickness of the CeF 3 film increases (from 100 to 220 nm), the brightness of the EL device increases to the maximum (9 cd m −2 , approximately pure blue luminescence); meanwhile, the intensity ratio between the blue peak and red peak also increases from 1.67 to 3.57 (maximum). As the thickness of CeF 3 continues to grow (from 220 to 500 nm), the brightness of EL devices decreases gradually, and the intensity ratio between the blue peak and red peak decreases from 3.57 to 0.37. When the thickness of CeF 3 increases to 700 nm, the corresponding brightness of the EL device reduces to 5 cd m −2 (minimum). Meanwhile, the blue peak (440 nm) shifts to the green area (524 nm).