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Device Performance as a Metrology Tool to Detect Metals in Silicon
Author(s) -
Claeys Cor,
Simoen Eddy
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900126
Subject(s) - materials science , optoelectronics , photocurrent , cmos , diode , silicon , transistor , semiconductor , capacitor , electronic engineering , electrical engineering , engineering , voltage
Herein, the impact of transition metals (TMs) on the electrical device performance, i.e., carrier lifetime, leakage current, low‐frequency noise, photocurrent, and solar cell efficiency is reviewed. Defect information is obtained by using either simple device structures such as metal‐oxide‐semiconductor (MOS) capacitors and pn‐diodes or transistors. The impact of metals on complementary MOS (CMOS) image sensors (CIS) and solar cells is also briefly addressed. Scaled devices are a power tool to detect small‐sized defect clusters or even single metal atoms. Examples are given for a variety of both slow‐ and fast‐diffusing metals. The final section outlines the power of density functional theory (DFT) ab initio calculations to support the experimental observations and to get a deeper physical insight into the defect structure.