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Origin of Resistance Switching and Regulation of the Resistance Stability by the Interface State Density on the Pt/Nb:SrTiO 3 Interface
Author(s) -
Li Guanghui,
Yang Ziyan,
Zhang Xinan,
Li Guoqiang,
Sun Xianwen,
Zhang Weifeng
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900125
Subject(s) - doping , materials science , electron paramagnetic resonance , condensed matter physics , trapping , electron , optoelectronics , nuclear magnetic resonance , physics , ecology , quantum mechanics , biology
The surface defect and carrier concentrations of Nb‐doped SrTiO 3 (NSTO) single crystals play an important role in its resistance switching (RS) properties. Herein, the RS of both 0.05 and 0.7 wt% Nb‐doped NSTO single crystals are studied. The hole defects on NSTO, which are characterized by electron paramagnetic resonance, increase with the enhanced Nb‐doping level. The hole defects with positive charges directly affect the RS characters of the Pt/NSTO junction by electron trapping/detrapping. The stability and discrimination of the resistance states are correlated with the interface state density and carrier concentration, which is controlled by the Nb‐doping level. The fundamental physical processes are proposed according to the experimental results.