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Fabrication of High‐Voltage Flip Chip Deep Ultraviolet Light‐Emitting Diodes Using an Inclined Sidewalls Structure
Author(s) -
Zhong Zhibai,
Zheng Xuanli,
Li Jinchai,
Zheng Jinjian,
Zang Yashu,
Lin Wei,
Kang Junyong
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900059
Subject(s) - materials science , light emitting diode , optoelectronics , ultraviolet , diode , fabrication , flip chip , voltage , chip , ultraviolet light , optics , nanotechnology , electrical engineering , physics , engineering , medicine , alternative medicine , adhesive , pathology , layer (electronics)
Two types of high‐voltage flip chip deep ultraviolet light emitting diodes (HV‐FC DUV‐LEDs) are constructed with 2 × 2 and 3 × 3 cells, respectively, in which each single cell is fabricated with inclined sidewalls covered by SiO 2 /Al. The simulation results suggest that the structure with inclined sidewalls is much favorable to extract the transverse magnetic‐polarized lights. As a result, the light power as high as 145.7 mW is achieved in HV‐FC DUV‐LED constructed with 3 × 3 cells at 1000 mA.
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