Effect of In/Zn Ratios on Resistive Switching Behavior of IZO/TiO 2  Thin Film Devices | Zendy

Shan Fei | Zendy; Kim SungJin | Zendy

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Effect of In/Zn Ratios on Resistive Switching Behavior of IZO/TiO 2 Thin Film Devices

Author(s) -

Shan Fei,

Kim SungJin

Publication year - 2019

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.532

H-Index - 104

eISSN - 1862-6319

pISSN - 1862-6300

DOI - 10.1002/pssa.201900018

Subject(s) - materials science , thin film , indium , annealing (glass) , optoelectronics , spin coating , memristor , atomic layer deposition , fabrication , layer (electronics) , titanium , nanotechnology , electronic engineering , metallurgy , medicine , alternative medicine , pathology , engineering

The fabrication of a memristor device based on various indium zinc oxide (IZO) solution ratios is demonstrated. Titanium oxide (TiO 2 ) thin film is deposited using an atomic layer deposition technique, and then, an IZO thin film is grown on the TiO 2 layer with spin‐coating and vacuum annealing at 400 °C. An aluminum (Al)/IZO/TiO 2 /Al device fabricated with an indium/zinc (In/Zn) solution ratio of 6:4 exhibits high electrical conductivity and excellent cycling stability. The work presented here can provide a new method for exploring the possibility of a high‐performance memristor for electronic applications.

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