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Effect of In/Zn Ratios on Resistive Switching Behavior of IZO/TiO 2 Thin Film Devices
Author(s) -
Shan Fei,
Kim SungJin
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900018
Subject(s) - materials science , thin film , indium , annealing (glass) , optoelectronics , spin coating , memristor , atomic layer deposition , fabrication , layer (electronics) , titanium , nanotechnology , electronic engineering , metallurgy , medicine , alternative medicine , pathology , engineering
The fabrication of a memristor device based on various indium zinc oxide (IZO) solution ratios is demonstrated. Titanium oxide (TiO 2 ) thin film is deposited using an atomic layer deposition technique, and then, an IZO thin film is grown on the TiO 2 layer with spin‐coating and vacuum annealing at 400 °C. An aluminum (Al)/IZO/TiO 2 /Al device fabricated with an indium/zinc (In/Zn) solution ratio of 6:4 exhibits high electrical conductivity and excellent cycling stability. The work presented here can provide a new method for exploring the possibility of a high‐performance memristor for electronic applications.