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P‐type Sb‐doped Cu 2 O Hole Injection Layer Integrated on Transparent ITO Electrode for Acidic PEDOT:PSS‐Free Quantum Dot Light Emitting Diodes
Author(s) -
Seo HyeongJin,
Lee JiEun,
Heo Su Been,
Kim Minju,
Yi Yeonjin,
Kang Seong Jun,
Kim HanKi
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201900004
Subject(s) - materials science , pedot:pss , light emitting diode , optoelectronics , electrode , anode , quantum dot , doping , diode , layer (electronics) , work function , quantum efficiency , nanotechnology , chemistry
It is developed that transparent p‐type Sb‐doped cuprous oxide (ACO) integrated Sn‐doped In 2 O 3 (ITO) film as hole injection layer (HIL) and anode combined electrodes for quantum dot light emitting diodes (QD‐LEDs) to substitute acidic PEDOT:PSS HIL based electrode. By graded co‐sputtering of ACO and ITO targets, the graded p‐type ACO buffer layer can be integrated on the surface region of the ITO electrodes. P‐type conductivity of the ACO film for acting as effective HIL in QD‐LEDs is confirmed by a positive Hall coefficient (1.74 × 10 −3 ohm cm 3 /C) and a positive Seebeck constant (115 µV K −1 ). Due to the well‐matched work function of p‐type ACO on the ITO electrodes, the acidic PEDOT:PSS‐free QD‐LEDs exhibited typical current‐voltage‐luminescence of QD‐LEDs. The successful operation of PEDOT:PSS‐free QD‐LED with p‐type ACO integrated ITO electrode indicates that ACO and ITO anode graded sputtering is simpler fabrication steps for cost‐effective QD‐LEDs and elimination of interfacial reactions caused by the acidic PEDOT:PSS layer for reliable QD‐LEDs.