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Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement (Phys. Status Solidi A 24∕2018)
Author(s) -
Phan HoangPhuong,
Nguyen TuanKhoa,
Dinh Toan,
Cheng HanHao,
Mu Fengwen,
Iacopi Alan,
Hold Leonie,
Dao Dzung Viet,
Suga Tadatomo,
Senesky Debbie G.,
Nguyen NamTrung
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201870054
Subject(s) - silicon carbide , materials science , substrate (aquarium) , doping , strain (injury) , silicon , gauge factor , strain gauge , composite material , optoelectronics , fabrication , medicine , oceanography , alternative medicine , pathology , geology
Silicon Carbide In article number 1800288 Hoang‐Phuong Phan, Nam‐Trung Nguyen and co‐workers elucidate the piezoresistance in n‐type single crystal 3C‐SiC film on glass substrate. Experimental data show a negative gauge factor of —8.6, which is in solid agreement with theoretical analysis based on the many valleys electron transfer phenomenon. The result demonstrates the potential of 3C‐SiC for mechanical sensing applications.