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Nanoscale Characterization of Active Doping Concentration in Boron‐Doped Individual Si Nanocrystals (Phys. Status Solidi A 23∕2018)
Author(s) -
Xu Jie,
Li Dongke,
Chen Deyuan,
Li Wei,
Xu Jun
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201870052
Subject(s) - doping , kelvin probe force microscope , nanoscopic scale , nanocrystal , materials science , characterization (materials science) , nanotechnology , boron , optoelectronics , atomic force microscopy , chemistry , organic chemistry
Si Nanocrystals The doping effect of individual B‐doped Si nanocrystals (NCs) is characterized by surface potential imaging using Kelvin probe force microscopy measurement. Furthermore, the real tip‐sample contact potential difference (CPD) is obtained through a Wiener filter to quantify the active B doping concentration. More details can be found in the article number 1800531 by Jie Xu, Jun Xu and co‐workers.