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Effects of the Temperature Gradient Near the Crystal‐Melt Interface in Top Seeded Solution Growth of SiC Crystal (Phys. Status Solidi A 20∕2018)
Author(s) -
Ha MinhTan,
Shin YunJi,
Lee MyungHyun,
Kim CheolJin,
Jeong SeongMin
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201870045
Subject(s) - seeding , temperature gradient , materials science , crystal (programming language) , seed crystal , silicon , crystal growth , carbon fibers , finite element method , composite material , crystallography , single crystal , optoelectronics , chemistry , thermodynamics , composite number , physics , quantum mechanics , computer science , programming language
Top Seeded Solution Growth Two hot zone structures growing SiC via top seeded solution growth (TSSG) are evaluated using the finite element analysis (FEA) simulation, especially for the temperature distribution, the velocity field, and the carbon concentration in the silicon melt. SiC crystals are experimentally grown to verify the simulation results with the two hot zone structures. The simulations and experiments suggest that the hot zone structure with a small temperature gradient especially near the interface between the crystal and the melt promotes stable conditions for growing SiC crystals via the TSSG method. More details can be found in article number 1701017 by Minh‐Tan Ha, Seong‐Min Jeong and co‐workers.