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Sanitization of Data in Nanoscale Flash Memory by Thermal Erasing and Reuse of Storage (Phys. Status Solidi A 14∕2018)
Author(s) -
Park JunYoung,
Moon DongIl,
Kim SeongYeon,
Im Hwon,
Chang Ki Soo,
Jeong Chanbae,
Choi YangKyu
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201870029
Subject(s) - flash memory , flash (photography) , computer data storage , reuse , flash file system , computer science , reliability (semiconductor) , embedded system , chip , computer hardware , computer memory , process (computing) , semiconductor memory , operating system , engineering , physics , optics , waste management , telecommunications , power (physics) , quantum mechanics
Flash Memory In article number 1800194 by Jun‐Young Park, Yang‐Kyu Choi and co‐workers, a thermal erasing method for destroying the data stored in flash memory is proposed at cell level and at commercial chip level. The principle of the proposed method is based the loss of electrons stored in the charge trap layer in flash memory at high temperature. The proposed method destroys the data permanently without degrading performance or reliability. In addition, the thermal erasing process allows the memory chip to be reused with stealth, regardless of the capacity of the storage. This study can be used to help improve the level of security for data stored in flash memory and solidstate drives (SSD) against unauthorized users and cyber‐crime.