Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures (Phys. Status Solidi A 8∕2018)

Nanowires III‐V semiconductor nanowires (NWs) have attracted attention as a constituent of small electronic devices with high performance. In particular, the demand for GaAsSb/InAs NWs is increasing because the GaAsSb/InAs material system can afford structures with type‐II and broken‐bandgap alignment, depending on the Sb content of GaAsSb. In article number 1700429 Kenichi Kawaguchi and co‐workers investigate position‐controlled vaporliquid‐solid (VLS) growth of nanowires (NWs) for GaAsSb/InAs system. On mask‐patterned GaAs(111)B substrates, rod‐like InAs NWs are obtained by the introduction of a small amount of HCl gas. The InAs NW diameter depends on the Au catalyst size and pitch of NWs, which can be explained by the VLS growth accompanied by lateral growth. A peculiar change in InAs NW shapes for additive HCl gas is revealed. The formation of axial GaAsSb/InAs heterostructure NWs is demonstrated.