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Optical and Photoelectric Properties of Nanolamellar Structures Obtained by Thermal Annealing of InSe Plates in Zn Vapours (Phys. Status Solidi A 4∕2018)
Author(s) -
Untila Dumitru,
Evtodiev Igor,
Caraman Iuliana,
Spalatu Nicolae,
Dmitroglo Liliana,
Caraman Mihail
Publication year - 2018
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201870007
Subject(s) - vapours , heterojunction , materials science , photoelectric effect , annealing (glass) , composite number , lamella (surface anatomy) , photoluminescence , semiconductor , exfoliation joint , cleavage (geology) , optoelectronics , crystallography , nanotechnology , chemistry , composite material , graphene , neuroscience , fracture (geology) , biology
Lately, an increased attention is paid to AIIIBVI semiconductors (A = Ga, In; B = S, Se, Te), due to their layered structure and weak chemical bonds between elementary packings (B‐AA‐B), which allow an easily obtaining of lamella consisting of one/several packings, by cleavage or exfoliation of single crystals. Due to above‐mentioned aspects, these materials are promising for applications in 2D electronics and optoelectronics. Here, the results of structural, optical and photoelectric properties analysis of InSe crystals grown by Bridgman‐Stockbarger method, and InSe lamella thermally annealed in Zn vapours, are presented. The analysis revealed the ZnSe compound formation onto surface of InSe plates. The ZnSe‐InSe composite layer and the composite/InSe heterojunction are photosensitive and photoluminescent in the VIS‐NIR spectral region. This is reported by Dumitru Untila and co‐workers in article number 1700434 .