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In Situ Transmission Electron Microscopy Study of Molybdenum Oxide Contacts for Silicon Solar Cells
Author(s) -
Ali Haider,
Koul Supriya,
Gregory Geoffrey,
Bullock James,
Javey Ali,
Kushima Akihiro,
Davis Kristopher O.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800998
Subject(s) - high resolution transmission electron microscopy , transmission electron microscopy , silicon , materials science , ohmic contact , annealing (glass) , molybdenum , oxide , analytical chemistry (journal) , nanotechnology , crystallography , optoelectronics , chemistry , metallurgy , layer (electronics) , chromatography
In this study, a molybdenum oxide (MoO x ) and aluminum (Al) contact structure for crystalline silicon (c‐Si) solar cells is investigated using a combination of transmission line measurements (TLM) and in‐situ transmission electron microscopy (TEM). Cross‐sectional high‐resolution TEM (HRTEM) micrographs reveal a ≈2 nm silicon oxide (SiO x ) interlayer at c‐Si/MoO x interface in the as‐deposited state, indicating that formation of SiO x occurs during deposition of MoO x . Moreover, oxygen diffusion takes place from MoO x toward Al resulting in the formation of a ≈2–3 nm aluminum oxide (AlO x ) interlayer at the MoO x /Al interface. Overall, it is observed that MoO x /Al contact is relatively stable upon annealing up to 200 °C and still retains ohmic transport with sufficiently low contact resistivity.
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