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Structural and Optoelectronic Properties of MoO 3 /CuSe Interfaces
Author(s) -
Alharbi Seham Reef,
Qasrawi Atef Fayez
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800977
Subject(s) - materials science , dielectric , amorphous solid , thin film , heterojunction , spectroscopy , drude model , optoelectronics , substrate (aquarium) , analytical chemistry (journal) , optics , nanotechnology , chemistry , crystallography , physics , oceanography , quantum mechanics , geology , chromatography
In this article, the authors discuss the growth nature, the structural, optical and dielectric properties of CuSe thin films deposited onto MoO 3 substrate. The films are studied by the X‐ray diffraction, scanning electron microscopy, energy dispersive X‐ray spectroscopy and ultraviolet‐visible light spectroscopy techniques. CuSe thin films are observed to exhibit strained nature of growth when grown onto MoO 3 amorphous substrates. Optically, the MoO 3 /CuSe films are found to exhibit conduction ( Δ E c ) and valence ( Δ E v ) band offsets of values of 3.70 and 3.42 eV, respectively. In addition, a remarkable increase in the absorbability ( R λ ) of MoO 3 by 72 times at 3.0 eV is obtained as a result of coating it with CuSe. The Δ E c , Δ E v , andR λvalues are significantly high and nominate the MoO 3 /CuSe interfaces for use in many optoelectronic applications. In addition, the dielectric analysis shows that the MoO 3 /CuSe heterojunction exhibit optical conductivity parameters that make it suitable for use in optical communications. Particularly, the Drude‐Lorentz modeling of the imaginary part of the dielectric constant for the MoO 3 /CuSe interfaces displays mobility and plasmon frequency values of 7.76 cm 2 V −1 s −1 and 3.78 GHz, respectively. The obtained plasmon frequency values indicate the applicability of this device in microwave technology.