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Scalable Approach for Amorphous Thin Silicon Films Near‐IR Laser‐Induced Crystallization Using Nickel Absorption Layer
Author(s) -
Serdobintsev Alexey A.,
Kozhevnikov Ilya O.,
Starodubov Andrey V.,
Ryabukho Peter V.,
Galushka Victor V.,
Pavlov Anton M.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800964
Subject(s) - materials science , polycrystalline silicon , silicon , raman spectroscopy , nanocrystalline silicon , optoelectronics , thin film , amorphous silicon , amorphous solid , crystalline silicon , isotropic etching , analytical chemistry (journal) , etching (microfabrication) , layer (electronics) , optics , nanotechnology , thin film transistor , crystallography , chemistry , physics , chromatography
Technology for thin polycrystalline silicon films preparation is crucial for development of novel semiconductor devices, including flexible electronics. A method for thin polycrystalline silicon film preparation utilizing deposited nickel absorption layer which allows use of inexpensive 1064 nm pulsed YAG:Nd laser for laser annealing of magnetron‐sputtered amorphous silicon is reported here. Film morphology changes are visualized with scanning electron microscopy, its chemical composition and Ni fate upon laser irradiation are studied using X‐ray energy dispersion analysis and secondary ion mass spectrometry. Silicon crystalline structure changes and its homogeneity are characterized using Raman spectroscopy utilizing mapped spectral measurements. Range of laser radiation energy fluence (J cm −2 ) is established which allowed for preparation of fully polycrystalline silicon film with crystalline silicon Raman peak position and width comparable to that of single‐crystalline material. Nickel film is found to ablate substantially upon irradiation, leaving remains that can be easily removed by chemical etching.