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Structural, Electrical, and Optical Effects of Metal Doping on ZnO Thin Films
Author(s) -
Huber Silvia,
Mardare Cezarina Cela,
Kleber Christoph,
Hassel Achim Walter
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800942
Subject(s) - materials science , doping , band gap , dopant , amorphous solid , thin film , semiconductor , analytical chemistry (journal) , spectroscopy , metal , zinc , nanotechnology , optoelectronics , metallurgy , crystallography , chemistry , physics , chromatography , quantum mechanics
Doped ZnO thin films are prepared by reactive co‐sputtering of ZnO and a metal (Mn, Ti, W, and Zr). Structural and morphological analysis is done by means of SEM/EDX, XRD, and AFM. Electrical properties in terms of Volta potential are determined via Scanning Kelvin Probe (SKP), UV–VIS spectroscopy is employed to investigate optical properties. Band gaps E g are obtained using Tauc plots. Doping of ZnO led to significant differences regarding structural, electrical, and optical properties. Morphology of doped ZnO tends to be smoother and more compact, as compared to the pristine ZnO. XRD measurements proved that W doped ZnO films exhibit an amorphous structure, whereas a secondary phase present in the Mn doped ZnO is strongly suggested. W and Mn as dopants lead also to special band gap positions in UV spectroscopy. W:ZnO exhibits a higher value for E g whereas band gaps of Ti:ZnO and Zr:ZnO are similar to pristine ZnO. For Mn:ZnO two band gaps can be obtained. One is slightly higher and the other one is significantly lower than the one of pristine ZnO. Volta potential doubled when ZnO is doped with W, Zr, or Ti as compared to the pristine ZnO. Mn doped ZnO resulted in a lower Volta potential than pristine ZnO.