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CuGaSe 2 Thin Film Solar Cells: Challenges for Developing Highly Efficient Wide‐Gap Chalcopyrite Photovoltaics
Author(s) -
Ishizuka Shogo
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800873
Subject(s) - copper indium gallium selenide solar cells , chalcopyrite , photovoltaics , band gap , materials science , optoelectronics , ternary operation , thin film , solar cell , tandem , czts , nanotechnology , engineering physics , photovoltaic system , computer science , physics , copper , engineering , metallurgy , electrical engineering , composite material , programming language
CuGaSe 2 , with a band‐gap energy of 1.7 eV, is expected to be a practical material useful for wide‐gap top cells in tandem structure solar cells. In contrast to the success of narrow‐gap Cu(In,Ga)Se 2 devices which are already in commercial production, there is room for further improvement before considering practical applications for CuGaSe 2 devices. In this review, the developments in CuGaSe 2 devices reported to date are surveyed from the perspective of wide‐gap chalcopyrite photovoltaics with a focus upon ternary CuGaSe 2 films and solar cells. Differences observed between CuGaSe 2 and CuInSe 2 or Cu(In,Ga)Se 2 films and device properties and correlations with the alkali‐effects are also discussed.