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Progress in External Quantum Efficiency for III‐Nitride Based Deep Ultraviolet Light‐Emitting Diodes
Author(s) -
Chu Chunshuang,
Tian Kangkai,
Zhang Yonghui,
Bi Wengang,
Zhang ZiHui
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800815
Subject(s) - quantum efficiency , light emitting diode , optoelectronics , ultraviolet , materials science , diode , nitride , nanotechnology , layer (electronics)
AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) are featured with small size, DC driving, no environmental contamination etc., and they are now emerging as the excellent solid‐state light source to replace the conventional mercury based light tubes. Nevertheless, the DUV LEDs are currently affected by the poor external quantum efficiency (EQE), which is caused by the low internal quantum efficiency (IQE) and the very unsatisfying light extraction efficiency (LEE). In this work, the authors disclose the underlying mechanism for the low EQE and summarize the technologies that have been adopted so far for enhancing the EQE.