Premium
Negative Magnetoresistance in Si Nanograting Layers
Author(s) -
Tavkhelidze Avtandil,
Grabecki Grzegorz,
Jangidze Larissa,
Yahniuk Ivan,
Taliashvili Zakhari,
Taliashvili Badri
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800693
Subject(s) - magnetoresistance , materials science , condensed matter physics , scattering , nanostructure , weak localization , reactive ion etching , lithography , silicon , etching (microfabrication) , electron beam lithography , ion milling machine , layer (electronics) , optics , optoelectronics , magnetic field , nanotechnology , physics , resist , quantum mechanics
Experimental measurements of low‐temperature electron transport across Si nanogratings with 200 nm period are reported. The structure is fabricated of silicon on insulator layer using laser interference lithography followed by reactive ion etching. For transport measurements, macroscopic Hall bar formed in the patterned layer is used. The main result is negative magnetoresistance observed for temperatures lower than 60 K and not saturating in magnetic fields up to 9 Tesla. It is interpreted in terms of weak localization suppression and fit the magnetoresistance curves by both the two‐dimensional and three‐dimensional theoretical models. Surprisingly, both models describe satisfactorily the data and thus the problem of dimensionality remains unsettled. However, obtained values of the phase coherence lengths are significantly smaller than both the nanograting period and layer thickness, indicating that the dominant scattering mechanism is not result of the nanostructure geometry.