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Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films
Author(s) -
Lam Ka Kin,
Chan Ka Ho,
Ng Sheung Mei,
Wong Hon Fai,
Liu Yu Kuai,
Leung Chi Wah,
Mak Chee Leung
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800660
Subject(s) - materials science , pulsed laser deposition , epitaxy , ferroelectricity , doping , thin film , fabrication , coercivity , diffraction , characterization (materials science) , analytical chemistry (journal) , polarization (electrochemistry) , optoelectronics , nanotechnology , optics , dielectric , condensed matter physics , chemistry , medicine , alternative medicine , physics , layer (electronics) , pathology , chromatography
Gd‐doped Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50) thin films with Gd‐doping concentration ranging from 1 to 4% are grown on Pt‐coated MgO (100) substrates using pulsed laser deposition technique. X‐ray diffraction studies show that the films are highly (001)‐oriented and epitaxially grown on the substrates. Electrical measurements show that the Gd‐SBN films possess good ferroelectric properties. Ramanent polarization of +P r = 1.36 μC cm −2 and −P r = −5.73 μC cm −2 and coercive field of +E c = 158.0 kV and −E c = −30.8 kV are obtained.