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Imaging Interstitial Iron Concentrations in Gallium‐Doped Silicon Wafers
Author(s) -
Post Regina,
Niewelt Tim,
Schön Jonas,
Schindler Florian,
Schubert Martin C.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800655
Subject(s) - gallium , wafer , doping , silicon , pairing , materials science , impurity , analytical chemistry (journal) , optoelectronics , chemistry , metallurgy , condensed matter physics , superconductivity , physics , chromatography , organic chemistry
In this work, the established method of iron imaging is transferred from B‐doped silicon to Ga‐doped material. For this purpose, the pairing and splitting conditions are investigated and a preparation procedure suggested that ensures a sufficient fraction of iron–gallium pairing and splitting, respectively. Furthermore the defect parameters available in literature are compared and evaluated for a suitable description of the injection dependent carrier lifetime measurements. A parameter set that enables a coherent and adequate iron evaluation is suggested. Thus, a robust method for spatially resolved determination of the interstitial iron concentration in Ga‐doped silicon wafers is presented.