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Controlling In‐Ga‐Zn‐O Thin‐Film Resistance by Vacuum Rapid Thermal Annealing and Application to Transparent Electrode
Author(s) -
Choi HyunSeok,
Cho WonJu
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800653
Subject(s) - materials science , amorphous solid , zinc , thin film transistor , indium , indium tin oxide , gallium , annealing (glass) , electrode , tin , thin film , oxide , optoelectronics , metallurgy , layer (electronics) , composite material , nanotechnology , chemistry , organic chemistry
This study reveals that an amorphous indium gallium zinc oxide film shows a large resistance change under vacuum rapid thermal annealing, whereas a zinc tin oxide film shows little resistance change under the same treatment. Based on these findings, the applicability of amorphous indium gallium zinc oxide thin films to a transparent source/drain electrode in zinc tin oxide thin‐film transistors is investigated. The optical transmittance of the amorphous indium gallium zinc oxide and amorphous zinc tin oxide films in the visible region is greater than 85%. Furthermore, a zinc tin oxide thin‐film transistor with an amorphous indium gallium zinc oxide source/drain electrode exhibits superior operation characteristics than devices with indium tin oxide source/drain electrodes, such as a lower threshold swing (from 369.96 to 315.45 mV dec −1 ), higher mobility (from 28.47 to 36.187 cm 2 V −1 s −1 ), and higher on/off current ratio (from 1.25 × 10 7 to 3.56 × 10 7 ). In addition, in positive and negative bias temperature stress tests, the zinc tin oxide thin‐film transistor with an amorphous indium gallium zinc oxide source/drain electrode shows almost equal stability compared to the zinc tin oxide thin‐film transistor with an indium tin oxide source/drain electrode.