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Size‐Controlled Si Nanocrystals Fabricated by Electron Beam Evaporation
Author(s) -
Blázquez Oriol,
LópezConesa Lluís,
LópezVidrier Julià,
Frieiro Juan Luis,
Estradé Sonia,
Peiró Francisca,
Ibáñez Jordi,
Hernández Sergi,
Garrido Blas
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800619
Subject(s) - materials science , photoluminescence , x ray photoelectron spectroscopy , silicon , electron beam physical vapor deposition , transmission electron microscopy , annealing (glass) , raman spectroscopy , evaporation , nanocrystal , silicon oxide , stoichiometry , analytical chemistry (journal) , luminescence , crystalline silicon , oxide , chemical vapor deposition , nanotechnology , optoelectronics , chemical engineering , optics , chemistry , metallurgy , silicon nitride , physics , chromatography , engineering , thermodynamics
Multilayers consisting of silicon nanocrystals (Si NCs) and SiO 2 are successfully fabricated by electron beam evaporation, using pure Si and SiO 2 targets in an oxygen‐rich atmosphere for alternately depositing silicon‐rich oxide (SRO) layers and SiO 2 barriers, respectively. A post‐deposition annealing process is carried out at different temperatures in order to achieve the Si precipitation in the form of nanocrystals. The stoichiometry of the layers is determined by X‐ray photoelectron spectroscopy, which confirms the controlled silicon oxidation in order to attain SRO layers. Transmission electron microscopy and Raman‐scattering measurements confirm the presence of crystalline Si‐nanoprecipitates. Photoluminescence spectra from the Si NC samples can be deconvolved into two contributions, whose dynamics suggest that two different luminescent centers are responsible for the optical emission of the samples.