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Formation and Characterization of Shallow Junctions in GaAs Made by Ion Implantation and ms‐Range Flash Lamp Annealing
Author(s) -
Duan Juanmei,
Wang Mao,
Vines Lasse,
Böttger Roman,
Helm Manfred,
Zeng YuJia,
Zhou Shengqiang,
Prucnal Slawomir
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800618
Subject(s) - annealing (glass) , dopant , ion implantation , materials science , optoelectronics , semiconductor , secondary ion mass spectrometry , dopant activation , nanoelectronics , ion , doping , analytical chemistry (journal) , cmos , nanotechnology , chemistry , metallurgy , organic chemistry , chromatography
With the demand of aggressive scaling in nanoelectronics, further progress can be realized by integration of high mobility semiconductors, such as III–V compound semiconductors, with complementary metal‐oxide‐semiconductor (CMOS) technology. In this study, the formation of shallow n–p and p–n junctions in GaAs utilizing ion implantation of S and Zn, respectively, followed by millisecond‐range flash lamp annealing (FLA) is presented. The distribution of implanted elements obtained by secondary ion mass spectrometry (SIMS) shows that the FLA process can effectively suppress the diffusion of dopants. Simultaneously, the ms‐range annealing is sufficient to recrystallize the implanted layer and to activate the dopants. Formation of p–n and n–p junctions is confirmed by current–voltage characteristics. The ratio of reverse to forward current can reach up to 1.7 × 10 7 in the n‐GaAs:Zn case.