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Interaction of Radiation‐Induced Self‐Interstitials with Vacancy‐Oxygen Related Defects V n O 2 (n from 1 to 3) in Silicon
Author(s) -
Murin Leonid I.,
Tolkacheva Ekaterina A.,
Lastovskii Stanislau B.,
Markevich Vladimir P.,
Mullins Jack,
Peaker Anthony R.,
Svensson Bengt G.
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800609
Subject(s) - irradiation , silicon , oxygen , annealing (glass) , electron beam processing , vacancy defect , materials science , analytical chemistry (journal) , metastability , crystallographic defect , atmospheric temperature range , crystallography , atomic physics , nuclear chemistry , chemistry , metallurgy , physics , organic chemistry , chromatography , nuclear physics , meteorology
Two stage electron irradiation with thermal heat‐treatments after each stage is used for vacancy‐oxygen‐related defect engineering in Czochralski‐grown silicon (Cz‐Si). The Cz‐Si samples are first irradiated at room temperature with 2.5 MeV electrons and then heat‐treated at 320 °C to anneal out the VO, V 2 O, and V 3 O centers and generate the VO 2 , V 2 O 2 , and V 3 O 2 complexes as the dominant vacancy‐oxygen‐related defects. Subsequently, the samples are irradiated at room temperature again and subjected to 30‐min isochronal annealing in the temperature range 75–350 °C. Defect evolution upon the treatments is monitored by means of the local vibrational mode (LVM) absorption spectroscopy. From an analysis of changes in intensity of the LVM lines it is revealed that the second irradiation results in a noticeable decrease in the concentrations of the VO 2 , V 2 O 2 , and V 3 O 2 complexes and an increase in the concentrations of the oxygen dimer and the VO 2 * defect (metastable state of VO 2 , which consists of the VO and O i components). The observed defect transformations are argued to be related to interactions of the radiation‐induced self‐interstitial silicon atoms (I) with the vacancy‐oxygen complexes via the following reactions: VO 2 + I → O 2i , V 3 O 2 + I → V 2 O 2 , V 2 O 2 + I → VO 2 *.