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Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core‐Multishell Nanowires
Author(s) -
Liborius Lisa,
Heyer Fabian,
Arzi Khaled,
Speich Claudia,
Prost Werner,
Tegude FranzJosef,
Weimann Nils,
Poloczek Artur
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800562
Subject(s) - nanowire , metalorganic vapour phase epitaxy , optoelectronics , materials science , quantum tunnelling , diode , coaxial , saturation current , ohmic contact , common emitter , heterojunction bipolar transistor , rectification , nanotechnology , epitaxy , layer (electronics) , bipolar junction transistor , voltage , transistor , electrical engineering , engineering
In this work the reduction of reverse currents in Au‐catalyzed, MOVPE grown coaxial GaAs nanowire diodes are reported. The reduction is achieved by introducing an interstitial, lattice‐matched i ‐InGaP shell (spacer) as tunneling barrier inside the junction, which also functions as a selective etch stop. With increasing spacer thickness, rectification ratios of >1.57 × 10 6 at ± 1.65 V, ideality factors of 1.3, and dark saturation current densities as low as 20 pA cm −2 are extracted, which are related to a reduced tunneling probability. Temperature‐dependent DC measurements of junctions with thin spacers show a correlation to a simple (trap‐assisted) tunneling model. With absolute reverse currents in the pA range down to −3 V bias, the improved diode is implemented as a collector‐base junction in a coaxial n(i)pn nanowire structure by growing an additional, outer n ‐doped InGaP shell as the emitter layer in a nanowire HBT.