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Al x GaN 1‐x /AlN/GaN and DH‐Al x GaN 1‐X /GaN HEMTs Threshold Voltage Model
Author(s) -
Muhea Wondwosen Eshetu,
Kermas Nawel,
Yigletu Fetene Mulugeta,
Cabré Roger,
Iñiguez Benjamin
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800526
Subject(s) - high electron mobility transistor , materials science , threshold voltage , optoelectronics , schottky diode , gallium nitride , wide bandgap semiconductor , schottky barrier , voltage , transistor , electrical engineering , diode , nanotechnology , layer (electronics) , engineering
Physics based threshold voltage ( V th ) models for Al x GaN 1‐x /AlN/GaN and double channel (DH‐Al x GaN 1‐X ) HEMT devices are presented. Based on the concept that donor like surface states located on the AlGaN top are the source of electrons in the 2DEG, analytical Schottky barrier height ( ϕ b ) expression is derived and used in the development of the threshold voltage models. The calculated V th values for sample AlGaN/AlN/GaN and DH‐Al x GaN 1‐X HEMT devices are consistent with the values extracted from published experimental data. Moreover, the V th models are incorporated in a recently proposed charge based I – V model for GaN HEMTs and DC characteristics of the devices under test are simulated. The model predictions are strongly correlated with experimental data in both the output and transfer characteristics cases over a full range of biasing conditions.