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Frequency Response of Barrier Type 2.6 µm In 0.83 Ga 0.17 As/In 0.83 Al 0.17 As Photodetectors on InP
Author(s) -
Ma Yingjie,
Yang Nannan,
Gu Yi,
Chen Xingyou,
Zhang Yonggang
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800514
Subject(s) - photodetector , detector , dark current , superlattice , optoelectronics , wavelength , materials science , electron , photodiode , optics , physics , quantum mechanics
This paper reports on the impulse response characteristics of the wavelength‐extended 2.6 µm metamorphic In 0.83 Ga 0.17 As/InP photodetectors with an In 0.66 Ga 0.34 As/InAs superlattice electron barrier. This barrier detector features greater rising times and smaller falling times simultaneously compared with a reference detector without barrier, explained by the delayed hole diffusion current and the blocked electron current by the barrier, respectively. The 3 dB bandwidth is 3% lower than that of the reference detector which demonstrates that the barrier In 0.83 Ga 0.17 As detectors still retain the capability of high speed operation while offering lower dark currents.