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Evaluation of Material Systems for THz Quantum Cascade Laser Active Regions
Author(s) -
Detz Hermann,
Andrews Aaron M.,
Kainz Martin A.,
Schönhuber Sebastian,
Zederbauer Tobias,
MacFarland Donald,
Krall Michael,
Deutsch Christoph,
Brandstetter Martin,
Klang Pavel,
Schrenk Werner,
Unterrainer Karl,
Strasser Gottfried
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800504
Subject(s) - cascade , terahertz radiation , quantum cascade laser , laser , optoelectronics , quantum , materials science , quantum well , engineering physics , optics , computer science , physics , engineering , quantum mechanics , chemical engineering
Quantum cascade lasers (QCLs) have been realized in several different material systems. In the mid‐infrared, active regions are predominantly based on In 0.53 Ga 0.47 As and InAs as quantum well material. Market‐ready devices routinely provide continuous‐wave operation at room temperature. For their THz counterparts, the situation is less clear. The most common material system for THz QCLs is the inherently lattice‐matched combination of GaAs with Al 0.15 Ga 0.85 As barriers. Yet, these devices still only reach a maximum operating temperature of 200 K with a lack of progress within the past years. Based on the identification of key parameters, this work reviews material systems for quantum cascade lasers with an emphasis on material and growth‐related aspects and the goal to identify promising candidates for future device generations. Similar active regions realized in different material systems allow to estimate the gain per unit thickness, as well as total growth times and relative thickness errors.