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Thermal Transient Extraction for GaN HEMTs by Frequency‐Resolved Gate Resistance Thermometry with Sub‐100 ns Time Resolution
Author(s) -
Cutivet Adrien,
Bouchilaoun Meriem,
Hassan Bilal,
Rodriguez Christophe,
Soltani Ali,
Boone François,
Maher Hassan
Publication year - 2019
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.201800503
Subject(s) - materials science , thermal resistance , transient (computer programming) , optoelectronics , transistor , time domain , electrical impedance , resolution (logic) , transposition (logic) , thermal , electronic engineering , electrical engineering , computer science , voltage , engineering , physics , artificial intelligence , meteorology , computer vision , operating system
This paper reports on the thermal impedance measurement of GaN high‐electron‐mobility‐transistors (HEMTs) using frequency‐resolved gate resistance thermometry. Corrections methods are used to enable measurement on a very broad frequency range up to the MHz range. Transposition to time‐domain is then conducted and allows, for the first time to the author's knowledge, a full determination of the device's thermal impedance with a time‐resolution down to 60 ns and no limitation on the maximum time range with a single measurement technique. Measurements are performed for HEMTs with different gate‐lengths and compared with literature. The experimental results demonstrate the validity and interest of the technique for the thermal impedance extraction of GaN based devices.